10 November 1998 Slotted-electron-sieve integrated photosensor for gas-proportional scintillation counters
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The performance of a new slotted electron sieve design in an integrated photo-sensor for use in xenon gas proportional scintillation detectors is described. The new design exhibits an enhanced photoelectron collection when compared to the earlier circular holes design, used for the first time in such application. The present design uses an electron sieve composed of a 50-micrometers pitch. The front surface is made photosensitive with a 150-thick CsI film. When an appropriate voltage is applied between the copper electrodes, the resulting electric field directs photoelectrons produced on the front surface through the holes in the sieve and onto a wire chamber where charge amplification occurs. Positive feedback is essentially eliminated since the charge amplification stage is optically decoupled from the photo-cathode. The electron sieve also provides a small amount of charge gain up to 2.8. The measured effective quantum efficiency, namely the number of photoelectrons traversing the electron sieve holes per incident 170-nm scintillation photon, as measured under present conditions, is about 8.3 percent. A discussion of the results is presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose A. Matias Lopes, Joaquim M. F. dos Santos, Carlos Alberto Na Conde, Richard E. Morgado, "Slotted-electron-sieve integrated photosensor for gas-proportional scintillation counters", Proc. SPIE 3445, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX, (10 November 1998); doi: 10.1117/12.330326; https://doi.org/10.1117/12.330326


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