1 July 1998 Fast estimation of pulse height spectra and extraction of transport parameters for semiconductor detectors
Author Affiliations +
Abstract
We discuss two simple, computationally efficient methods of estimating pulse height spectra for semiconductor detectors, one based on analytical techniques and the other involving Monte Carlo simulation. The former method gives rapid insight into the impact of major material parameters on detector performance, while the latter yields reasonable realistic spectra incorporating all major effects. We use both techniques in conjunction with a simulated annealing algorithm to extract electron and hole transport parameters from measured spectra.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce Andrew Brunett, James E. Toney, Tuviah E. Schlesinger, Ralph B. James, "Fast estimation of pulse height spectra and extraction of transport parameters for semiconductor detectors", Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); doi: 10.1117/12.312887; https://doi.org/10.1117/12.312887
PROCEEDINGS
10 PAGES


SHARE
Back to Top