1 July 1998 Influence of charge trapping in gallium arsenide radiation detectors
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In this paper, the effects of the trapping of electrons and holes on the performance of gallium arsenide x-(gamma) ray detectors are analyzed. Starting from the experimental spectra acquired with state of the art GaAs detectors, it is shown how much the existing modeling of the charge trapping can explain the data and predict the observed excess noise due to the trapping. An analysis made with Monte-Carlo simulations has been carried out and compared with the experiments. The relationship between the fraction of the trapped charge and the energy resolution of the detector has been determined and analyzed.
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Giuseppe Bertuccio, Claudio Canali, and Filipo Nava "Influence of charge trapping in gallium arsenide radiation detectors", Proc. SPIE 3446, Hard X-Ray and Gamma-Ray Detector Physics and Applications, (1 July 1998); doi: 10.1117/12.312888; https://doi.org/10.1117/12.312888

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