Paper
23 November 1982 Integrating 128 Element InSb Array: Recent Results
Gary Bailey
Author Affiliations +
Abstract
Indium antimonide (InSb) photodiode technology has progressed to the point where charge integration can now be accomplished directly on the diode junction capacitance. Recent development work at the jet Propulsion Laboratory has combined a 128-element linear array of InSb detectors with a silicon FET switched multiplexer (MUX) and the JFET preamp for readout. This device is characterized by a relatively low read noise of ',1200 electrons, large pixel charge storage capacity of 2 x 107 electrons, 2-3% responsivity nonuniformity, high quantum efficiency (≥0.8, and an NEP of ≈3 x 10-17W /Hz at 77 K.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary Bailey "Integrating 128 Element InSb Array: Recent Results", Proc. SPIE 0345, Advanced Multispectral Remote Sensing Technology and Applications, (23 November 1982); https://doi.org/10.1117/12.933783
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Multiplexers

Field effect transistors

Capacitance

Staring arrays

Diodes

Video

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