24 September 1998 Photoimaging properties and imaging technology based on As40Se60 thin layers
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Abstract
The present paper deals with an investigation of the image formation properties of As40Se60 thin layers and their application for the production of diffractive optical elements. Thin layers (0.5 - 5 micrometers ) were deposited by the vacuum thermal evaporation and exposed by a Xe-lamp or annealed at 150 degree(s)C. The spectral dependence of the index of refraction, n, of variously treated samples was obtained using Swanepoel method and the single-oscillator model parameters ((epsilon) , Eo, Ed) were estimated. Photo- and thermally induced changes of n, (epsilon) , Eo and Ed induced by exposure or by annealing are discussed on the basis of photo- and thermally induced structural changes, which were directly confirmed by Raman spectroscopy. Such photostructural changes provide good etching selectivity of unexposed and exposed parts of As40Se60 layers in amine based solutions. This provides possibility for the fabrication of surface-relief patterns. The sensitivity of As40Se60 layers has been found to be approximately 10 cm2/J. Holographic diffraction gratings were produced by the Ar and/or HeNe laser exposure. Diffraction efficiency values of holographic gratings achieved approximately 90% for the polarized light. The results obtained show that As40Se60 inorganic resists can be used for the production of holographic diffraction gratings.
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Miroslav Vlcek, Alexander V. Stronski, A. Sklenar, Sergey A. Kostyukevych, Peter F. Romanenko, "Photoimaging properties and imaging technology based on As40Se60 thin layers", Proc. SPIE 3450, Theory and Practice of Surface-Relief Diffraction Gratings: Synchrotron and Other Applications, (24 September 1998); doi: 10.1117/12.323408; https://doi.org/10.1117/12.323408
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