Silicon avalanche photodiodes (APDs) for time-resolved x-ray measurements

Alfred Q. R. Baron

doi:10.1117/12.331839

1 December 1998 Silicon avalanche photodiodes (APDs) for time-resolved x-ray measurements

Alfred Q. R. Baron

Proceedings Volume 3451, Time Structure of X-Ray Sources and Its Applications; (1998) https://doi.org/10.1117/12.331839
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

We provide a general introduction to the use of silicon avalanche photo-diodes (APDs) for x-ray timing measurements. We describe (and compare) some devices available from various manufacturers. In general, time resolutions of approximately 1 ns are typical, and pulse widths from such devices are in the range of 1 to 10 ns, allowing high count rates to be reached, easily in excess of 10⁷ Hz. We include a table of different devices and detailed references.

Citation Download Citation

Alfred Q. R. Baron "Silicon avalanche photodiodes (APDs) for time-resolved x-ray measurements", Proc. SPIE 3451, Time Structure of X-Ray Sources and Its Applications, (1 December 1998); https://doi.org/10.1117/12.331839

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