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15 September 1982 Vibrational Properties Of Rf Sputtered Hydrogenated Amorphous Ge-Si Alloys
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Proceedings Volume 0346, Thin Film Technologies and Special Applications; (1982) https://doi.org/10.1117/12.933798
Event: 1982 Technical Symposium East, 1982, Arlington, United States
Abstract
Amorphous Ge-SisH alloys have been prepared by r.f. sputtering in an argon-hydrogen atmosphere of varying hydrogen partial pressure and substrate temperature. The correlated data of the vibrational properties as measured by IR absorption and Raman scattering on these samples reveal several hydrogenic and lattice modes. The hydrogenic modes which grow with increasing hydrogenation can be identified with various Ge (Si)-H type molecular modes. The absorption due to Si-H modes appears stronger than that due to Ge-H modes, indicating a pre-ferential H attachment to Si atoms. Dehydrogenation by annealing at successively high temperatures leads to selective reduction/disappearance of certain modes assigned to Ge (Si)-H vibrations. Also, the observed variation (0.1 to 0.7) in the depolarisation ratio for the Raman spectra of asdeposited samples become stabilised at 0.5 with annealing. These data are interpreted in terms of the film growth process and associated structural inhomogeneities and H- bonding configurations.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. K. Paul, P. K. Banerjee, R. Dutta, and S. S. Mitra "Vibrational Properties Of Rf Sputtered Hydrogenated Amorphous Ge-Si Alloys", Proc. SPIE 0346, Thin Film Technologies and Special Applications, (15 September 1982); https://doi.org/10.1117/12.933798
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