3 November 1998 Novel structure for dual-function electroabsorption waveguide modulator/phototransistor
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Abstract
A novel npin waveguide structure for the dual-function electroabsorption modulator/detector is proposed and fabricated. With the addition of an n-layer to the conventional pin-structure, the device exhibits phototransistor behavior in the detector model. The device has an InGaAsP intrinsic layer with Franz-Keldysh electroabsorption at 1.3 micrometers wavelength. Preliminary results show optical gain in the detector mode and good modulator characteristics.
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Dong-Soo Shin, Chen Kuo Sun, Wei-Xi Chen, Stephen A. Pappert, J. T. Zhu, Richard Nguyen, Yet Zen Liu, Paul K. L. Yu, "Novel structure for dual-function electroabsorption waveguide modulator/phototransistor", Proc. SPIE 3463, Photonics and Radio Frequency II, (3 November 1998); doi: 10.1117/12.330400; https://doi.org/10.1117/12.330400
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KEYWORDS
Modulators

Waveguides

Sensors

Phototransistors

Photodetectors

Absorption

Etching

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