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3 November 1998 Novel structure for dual-function electroabsorption waveguide modulator/phototransistor
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Abstract
A novel npin waveguide structure for the dual-function electroabsorption modulator/detector is proposed and fabricated. With the addition of an n-layer to the conventional pin-structure, the device exhibits phototransistor behavior in the detector model. The device has an InGaAsP intrinsic layer with Franz-Keldysh electroabsorption at 1.3 micrometers wavelength. Preliminary results show optical gain in the detector mode and good modulator characteristics.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong-Soo Shin, Chen Kuo Sun, Wei-Xi Chen, Stephen A. Pappert, J. T. Zhu, Richard Nguyen, Yet Zen Liu, and Paul K. L. Yu "Novel structure for dual-function electroabsorption waveguide modulator/phototransistor", Proc. SPIE 3463, Photonics and Radio Frequency II, (3 November 1998); https://doi.org/10.1117/12.330400
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