Novel structure for dual-function electroabsorption waveguide modulator/phototransistor

Dong-Soo Shin; Chen Kuo Sun; Wei-Xi Chen; Stephen A. Pappert; J. T. Zhu; Richard Nguyen; Yet Zen Liu; Paul K. L. Yu

doi:10.1117/12.330400

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3 November 1998 Novel structure for dual-function electroabsorption waveguide modulator/phototransistor

Dong-Soo Shin, Chen Kuo Sun, Wei-Xi Chen, Stephen A. Pappert, J. T. Zhu, Richard Nguyen, Yet Zen Liu, Paul K. L. Yu

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Proceedings Volume 3463, Photonics and Radio Frequency II; (1998) https://doi.org/10.1117/12.330400
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

A novel npin waveguide structure for the dual-function electroabsorption modulator/detector is proposed and fabricated. With the addition of an n-layer to the conventional pin-structure, the device exhibits phototransistor behavior in the detector model. The device has an InGaAsP intrinsic layer with Franz-Keldysh electroabsorption at 1.3 micrometers wavelength. Preliminary results show optical gain in the detector mode and good modulator characteristics.

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Dong-Soo Shin, Chen Kuo Sun, Wei-Xi Chen, Stephen A. Pappert, J. T. Zhu, Richard Nguyen, Yet Zen Liu, and Paul K. L. Yu "Novel structure for dual-function electroabsorption waveguide modulator/phototransistor", Proc. SPIE 3463, Photonics and Radio Frequency II, (3 November 1998); https://doi.org/10.1117/12.330400

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