High-power coherent semiconductor laser design operating in the IR region

Asu Ram Jha

doi:10.1117/12.331144

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13 November 1998 High-power coherent semiconductor laser design operating in the IR region

Asu Ram Jha

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Proceedings Volume 3465, Millimeter and Submillimeter Waves IV; (1998) https://doi.org/10.1117/12.331144
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

Diode-pumped solid state (DPSS) lasers employing diode arrays and optical crystals suffer from excessive weight, low conversion efficiency, and high fabrication cost. This paper reveals a unique design of coherent, high performance InGaAsP/InP strained-layer quantum-well (QW) semiconductor laser capable of delivering CW power output greater than 500 mw at 1.55 microns. It is important to mention that InGaAsP/InP strained-layer double-quantum-well (DQW) laser diodes are capable of yielding even higher optical power output with improved differential quantum efficiency (DQE) and with lower threshold current at 20 deg C. Compact packaging, minimum power consumption, eye-safe operation and minimum cost are the major benefits of this laser design.

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Asu Ram Jha "High-power coherent semiconductor laser design operating in the IR region", Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); https://doi.org/10.1117/12.331144

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