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13 November 1998 High-power coherent semiconductor laser design operating in the IR region
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Abstract
Diode-pumped solid state (DPSS) lasers employing diode arrays and optical crystals suffer from excessive weight, low conversion efficiency, and high fabrication cost. This paper reveals a unique design of coherent, high performance InGaAsP/InP strained-layer quantum-well (QW) semiconductor laser capable of delivering CW power output greater than 500 mw at 1.55 microns. It is important to mention that InGaAsP/InP strained-layer double-quantum-well (DQW) laser diodes are capable of yielding even higher optical power output with improved differential quantum efficiency (DQE) and with lower threshold current at 20 deg C. Compact packaging, minimum power consumption, eye-safe operation and minimum cost are the major benefits of this laser design.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Asu Ram Jha "High-power coherent semiconductor laser design operating in the IR region", Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); https://doi.org/10.1117/12.331144
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