13 November 1998 Potential of second-harmonic power generation in InP Gunn oscillators above 200 GHz
Author Affiliations +
One of the critical challenges facing the progress of millimeter and submillimeter-wave systems is the development of compact, efficient and reliable local oscillators that can generate low-noise and adequate output power levels. Recent theoretical and experimental results have established that fundamental-mode operation of InP Gunn devices could be obtained over much of the D-Band (110 GHz - 170 GHz). Based on these results, second-harmonic power generation could provide the needed local oscillators up to the highest frequency in the millimeter-wave region. This paper reports rigorous computer simulations that estimate the performance of second- harmonic InP Gunn oscillators at frequencies above 200 GHz. The simulation model, based on the ensemble Monte-Carlo technique, has been developed and validated experimentally. It accounts for heat dissipation and incorporates device-circuit interaction through the harmonic-balance technique. Results based on this model predict output power levels of 28 mW at 200 GHz and 7 mW at 310 GHz.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ridha Kamoua, Ridha Kamoua, "Potential of second-harmonic power generation in InP Gunn oscillators above 200 GHz", Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); doi: 10.1117/12.331183; https://doi.org/10.1117/12.331183


High-Speed Resonant-Tunneling Diodes
Proceedings of SPIE (August 17 1988)
GaAs IMPATT Sources
Proceedings of SPIE (October 23 1985)
Optimization of pulsed GaAs IMPATT diodes for 200 GHz
Proceedings of SPIE (September 08 1999)
Electron mobility modeling in HgCdTe
Proceedings of SPIE (October 25 1998)

Back to Top