13 November 1998 Si micromachining and whispering-gallery dielectric resonator modes: an original issue for high-Q coplanar millimeter-wave cavity
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Abstract
This paper deals with an original approach for the design and realization of high performance micromachined millimeter wave passive circuits on silicon. Full wave finite element 3D and 2D simulations techniques has been done to design the structures. First, because of the silicon anisotropic properties, we have designed a low loss tapered transition between the 50 (Omega) silicon input/output lines and the micromachined circuit. In order to minimize ohmic losses, new technological processes have been implemented. A 6 mm length micromachined coplanar transmission line, embedded between two tapers and probe pads, and featuring an overall insertion loss of less than 0.8 dB at up to 67 GHz has been achieved. From this technology, we have realized a high quality factor cavity in the 35 GHz range through an appropriate coupling between a micromachined coplanar line and a dielectric resonator acting on it whispering gallery modes. This original structure features a loaded Q of about 2000.
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Bertrand Guillon, D. Cros, T. Parra, Patrick Pons, J. C. Lalaurie, Robert Plana, Jacques Graffeuil, "Si micromachining and whispering-gallery dielectric resonator modes: an original issue for high-Q coplanar millimeter-wave cavity", Proc. SPIE 3465, Millimeter and Submillimeter Waves IV, (13 November 1998); doi: 10.1117/12.331173; https://doi.org/10.1117/12.331173
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