Paper
13 October 1998 Near-field optical spectroscopy of excitons in single quantum dots
Toshiharu Saiki, Kenichi Nishi
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Abstract
InGaAs single quantum dot photoluminescence spectra and images are investigated by using a low-temperature near- field optical microscope. By modifying the commonly used near-field apertured prove, a high spatial resolution and high detection efficiency are achieved simultaneously. Local collection of the emission signal through a 500 nm aperture contributes to the single-dot imaging with a (lambda) /6 resolution, which is a significant improvement over the convention spatially resolved spectroscopy. Tailoring the tapered structure of the near-field probe enables us to obtain the emission spectra of single dots in the weak excitation region, where the carrier injection rate is approximately 107 excitons/s per dot. By employing such a technique, we examine the evolution of single-dot emission spectra with excitation intensity. In addition to the ground-state emission, excited-state and biexciton emissions are observed for higher excitation intensities. By a precise investigations of the excitation power dependences of individual dots, 2D identification of their emission origins is obtained for the first time.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshiharu Saiki and Kenichi Nishi "Near-field optical spectroscopy of excitons in single quantum dots", Proc. SPIE 3467, Far- and Near-Field Optics: Physics and Information Processing, (13 October 1998); https://doi.org/10.1117/12.326821
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KEYWORDS
Near field

Quantum dots

Spatial resolution

Excitons

Luminescence

Optical microscopes

Near field optics

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