High-density photon-gated hole burning in sulfides

Levent Biyikli; Michael Solonenko; S. M. Ahmedyan; Zameer U. Hasan

doi:10.1117/12.330428

5 November 1998 High-density photon-gated hole burning in sulfides

Levent Biyikli, Michael Solonenko, S. M. Ahmedyan, Zameer U. Hasan

Proceedings Volume 3468, Advanced Optical Memories and Interfaces to Computer Storage; (1998) https://doi.org/10.1117/12.330428
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

We present the case of photoionization-induced persistent spectral holeburning in rare earth doped II-VI compounds for high density memory storage. Experimental data on photon-gated holeburning has been presented for different sulfide hosts (MgS, CaS: RE²⁺ and RE³⁺). With the proper choice of the host electronic band structure, the optically active rare earth ion and its electronic transitions involved in the holeburning process, we have observed the highest number of persistent holes ever burned in a single electronic transition. Efficient photon-gated holeburning in the 4f⁷ (⁸S_7/2) - 4f⁶5d¹ transition of Eu²⁺ is a result of photoionization of Eu²⁺ to Eu³⁺. These holes have a width of less than 5 GHz, have no detectable erasing effects after thousands of reading cycles, survive thermal cycling up to the room temperature and have infinite lifetime at low temperature (2 K). Although self- gated holeburning is observed with reading laser at higher powers, the photon budget for reading these holes is so small that thousands of reading cycles can be performed without significantly affecting the optical signal. We discuss the unique features of these systems that make them the most promising candidates to date for the holeburning based optical memories.

Citation Download Citation

Levent Biyikli, Michael Solonenko, S. M. Ahmedyan, and Zameer U. Hasan "High-density photon-gated hole burning in sulfides", Proc. SPIE 3468, Advanced Optical Memories and Interfaces to Computer Storage, (5 November 1998); https://doi.org/10.1117/12.330428

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