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6 July 1998 How to get light out of silicon: molecular design of precursors for MOCVD of Si:Er
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Abstract
Erbium {tris[bis(trimethylsilyl)]amide} has been employed as a dopant material for incorporation of the rare earth element erbium into a silicon host lattice for fabrication of monochromatic and temperature-independent optoelectronic devices. Electronic characteristics, including room temperature electroluminescence and glancing angle X-ray diffraction, have been obtained from deposited Si:Er films. The utilized erbium amide precursor has been compared to alternative erbium sources as hydrocarbon and fluorocarbon containing (beta) -diketonates (tmhd and fod).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William S. Rees Jr., Oliver Just, Lionel C. Kimerling, and Michael T. Morse "How to get light out of silicon: molecular design of precursors for MOCVD of Si:Er", Proc. SPIE 3469, Organic-Inorganic Hybrid Materials for Photonics, (6 July 1998); https://doi.org/10.1117/12.312904
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