Interface electronic properties of organic molecular semiconductors

Ian G. Hill; Antoine Kahn

doi:10.1117/12.332610

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16 December 1998 Interface electronic properties of organic molecular semiconductors

Ian G. Hill, Antoine Kahn

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Proceedings Volume 3476, Organic Light-Emitting Materials and Devices II; (1998) https://doi.org/10.1117/12.332610
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

The electronic structure and chemical properties of organic/organic and organic/metal interfaces involving molecular semiconductors are investigated via photoemission spectroscopy. The alignment of electronic levels, electron and hole injection barriers, and interface dipoles are measured for each interface. Chemical reactions and interdiffusion dominate metal-on-organic contacts, whereas organic-on-metal and organic/organic interfaces are more abrupt. The rule of vacuum level alignment, expected to hold for organic molecular interfaces, breaks down for all metal/organic and several organic/organic interfaces, showing that electronic gap states and other interface effects cannot be neglected at these interfaces.

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Ian G. Hill and Antoine Kahn "Interface electronic properties of organic molecular semiconductors", Proc. SPIE 3476, Organic Light-Emitting Materials and Devices II, (16 December 1998); https://doi.org/10.1117/12.332610

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