PROCEEDINGS VOLUME 3481
SPIE'S INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION | 19-24 JULY 1998
Superconducting and Related Oxides: Physics and Nanoengineering III
IN THIS VOLUME

3 Sessions, 51 Papers, 0 Presentations
SPIE'S INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION
19-24 July 1998
San Diego, CA, United States
Physical Properties of Oxide Superconductors
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 2 (22 December 1998); doi: 10.1117/12.335871
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 10 (22 December 1998); doi: 10.1117/12.335893
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 24 (22 December 1998); doi: 10.1117/12.335905
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 32 (22 December 1998); doi: 10.1117/12.335913
Device Physics and New Concepts
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 429 (22 December 1998); doi: 10.1117/12.335914
Physical Properties of Oxide Superconductors
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 60 (22 December 1998); doi: 10.1117/12.335864
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 144 (22 December 1998); doi: 10.1117/12.335865
Physical Properties of Oxide Superconductors
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 75 (22 December 1998); doi: 10.1117/12.335866
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 172 (22 December 1998); doi: 10.1117/12.335867
Physical Properties of Oxide Superconductors
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 87 (22 December 1998); doi: 10.1117/12.335868
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 97 (22 December 1998); doi: 10.1117/12.335869
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 106 (22 December 1998); doi: 10.1117/12.335870
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 161 (22 December 1998); doi: 10.1117/12.335872
Physical Properties of Oxide Superconductors
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 44 (22 December 1998); doi: 10.1117/12.335873
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 182 (22 December 1998); doi: 10.1117/12.335874
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 190 (22 December 1998); doi: 10.1117/12.335875
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 197 (22 December 1998); doi: 10.1117/12.335876
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 204 (22 December 1998); doi: 10.1117/12.335877
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 214 (22 December 1998); doi: 10.1117/12.335878
Physical Properties of Oxide Superconductors
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 17 (22 December 1998); doi: 10.1117/12.335879
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 114 (22 December 1998); doi: 10.1117/12.335880
Device Physics and New Concepts
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 435 (22 December 1998); doi: 10.1117/12.335881
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 226 (22 December 1998); doi: 10.1117/12.335882
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 342 (22 December 1998); doi: 10.1117/12.335883
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 241 (22 December 1998); doi: 10.1117/12.335884
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 248 (22 December 1998); doi: 10.1117/12.335885
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 265 (22 December 1998); doi: 10.1117/12.335886
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 274 (22 December 1998); doi: 10.1117/12.335887
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 280 (22 December 1998); doi: 10.1117/12.335888
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 292 (22 December 1998); doi: 10.1117/12.335889
Device Physics and New Concepts
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 376 (22 December 1998); doi: 10.1117/12.335890
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 366 (22 December 1998); doi: 10.1117/12.335891
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 153 (22 December 1998); doi: 10.1117/12.335892
Device Physics and New Concepts
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 407 (22 December 1998); doi: 10.1117/12.335894
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 400 (22 December 1998); doi: 10.1117/12.335895
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 419 (22 December 1998); doi: 10.1117/12.335896
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 480 (22 December 1998); doi: 10.1117/12.335897
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 448 (22 December 1998); doi: 10.1117/12.335898
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 457 (22 December 1998); doi: 10.1117/12.335899
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 469 (22 December 1998); doi: 10.1117/12.335900
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 300 (22 December 1998); doi: 10.1117/12.335901
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 310 (22 December 1998); doi: 10.1117/12.335902
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 326 (22 December 1998); doi: 10.1117/12.335903
Physical Properties of Oxide Superconductors
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 123 (22 December 1998); doi: 10.1117/12.335904
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 134 (22 December 1998); doi: 10.1117/12.335906
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 359 (22 December 1998); doi: 10.1117/12.335907
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 334 (22 December 1998); doi: 10.1117/12.335908
Device Physics and New Concepts
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 442 (22 December 1998); doi: 10.1117/12.335909
Thin Film Growth and Properties
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 317 (22 December 1998); doi: 10.1117/12.335910
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 348 (22 December 1998); doi: 10.1117/12.335911
Physical Properties of Oxide Superconductors
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, pg 68 (22 December 1998); doi: 10.1117/12.335912
Back to Top