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22 December 1998 Coefficient of electron diffusion in a single-crystal thin film
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Abstract
We have studied electron diffusion in thin single-crystal films using the Kubo formalism, at the Debye and room temperatures. We show that the diffusion coefficient in very thin films is half of the one found in crystals. This result is in good agreement with the experimental results particularly for aluminum. In our numerical calculations, the parameters of metal structure are fitted to obtain the formula for the diffusion coefficient. More specifically, these calculations show that increase in the crystal thickness causes increase of the coefficient of electron diffusion, and for the thickness of few hundred atomic monolayers reaches the value in bulk crystals. For example, the diffusion coefficient of a three-layer-thick film is 0.706(DOT)10-7 cm2/s, for five-layer film it amounts to 0.872(DOT)10-7 cm2/s, while for a thousand-layer film it is 1.253(DOT)10-7 cm2/s. The last value is rather close to the one we found for the bulk structure, 1.255(DOT)10-7 cm2/s.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dragana B. Mijatovic, Ljiljana D. Maskovic, and Milan Pantic "Coefficient of electron diffusion in a single-crystal thin film", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335907
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