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22 December 1998 High-temperature superconducting devices on buffered silicon substrates
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Abstract
The use of silicon as substrate for thin film devices based on high temperature superconducting oxides requires additional buffer layers to prevent interdiffusion, lattice mismatch, and internal stress by different thermal expansion coefficients. We tested different materials like yttrium-stabilized zirconia (YSZ), CeO2, and CoSi2. Laser deposition of a double buffer system YSZ/CeO2 gives best results for silicon substrates up to 2 inch wafers. In this way the superconducting YBa2Cu3O7-x (YBCO) films can reach a zero resistance temperature near 89 K and critical current densities at 77 K of up to 7(DOT)106 A/cm2. Additionally a nonsuperconducting but crystalline phase with the same stoichiometry (YBCO*) is used as passivation layer. Based on this technology we realized and investigated step- edge as well as new silicon bicrystal Josephson junctions, superconducting quantum interference devices (SQUIDs), bolometers using different compensation principles, and a new hybrid magnetometer. The hybrid magnetometer based on a simple Hall sensor was integrated with a superconducting antenna loop on the same chip.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Seidel, Sven Linzen, Gunter Kaiser, Frank Schmidl, Yongjun Tian, Andre Matthes, Swen Wunderlich, and Henrik Schneidewind "High-temperature superconducting devices on buffered silicon substrates", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335891
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