Paper
22 December 1998 Local determination of the terminating layer of SrTiO3
J. Fompeyrine, R. Berger, Christoph Gerber, Joel Perret, Jeongwoo Seo, Jean-Pierre Locquet
Author Affiliations +
Abstract
The crystallinity and physical properties of complex oxide films are strongly influenced by the quality of the substrate. This is determined by the bulk microstructure (e.g. grains, twin boundaries, vacancies) and by the surface characteristics. In the case of single-crystal films grown on single-crystal substrates, the latter point becomes extremely important and has to be studied in detail at the nanometer scale. In the case of SrTiO3 (001) substrates, the fabrication process usually leads to samples with different surfaces. The topography itself is very sensitive to process parameters, and has exhaustively been studied in the past few years. The terminating layer can be a mixture of both SrO and TiO2 planes. Only few techniques can determine this surface chemical composition, and so far only on a macroscopic scale. We report here, for the first time, the chemical characterization of such a surface, for which we use a combination of annealing and scanning probe microscopy. We then applied the same technique to the characterization of the surface LaAlO3 (001) and SrLaAlO4 (001) substrates. So far, no friction contrast has been observed on these latter surfaces. In the case of LaAlO3, the characteristic twin structure is clearly revealed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Fompeyrine, R. Berger, Christoph Gerber, Joel Perret, Jeongwoo Seo, and Jean-Pierre Locquet "Local determination of the terminating layer of SrTiO3", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335887
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Annealing

Crystals

Oxygen

Atomic force microscopy

Etching

Thallium

Thin films

Back to Top