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22 December 1998 Molecular beam epitaxial growth of BSCCO and Bi-based oxides: self-limiting growth of the Bi element
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Abstract
Self-limiting function of Bi element in connection with experimental results of sticking coefficients of constituent atoms of BSCCO is described. Molecular beam epitaxial growth of Bi2Sr2CuOx (Bi2201) and Bi4Ti3O12 (BIT) is demonstrated using this function. A further advanced method and its growth results for Bi2Sr2CaCu2Ox (Bi2212) and Bi2Sr2Ca2Cu3Ox (Bi2223) growth are shown, where a chemical reaction between Bi2201 molecular layer and one or two monolayers of Ca and Cu deposited on Bi2201 is used. Estimation by means of X-ray diffraction, reflection high-energy electron diffraction, and atomic force microscopy shows excellent quality of the films obtained. Heteroepitaxial growth of BIT/Bi2201 using the self- limiting function of Bi is also done.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeki Sakai, S. Migita, Hiroyuki Ota, H. Fujino, Yuji Kasai, Tsunehiro Oohira, H. Matsuhata, and Koji Kajimura "Molecular beam epitaxial growth of BSCCO and Bi-based oxides: self-limiting growth of the Bi element", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335872
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