22 December 1998 Nanoscale controlled growth and domain structure of epitaxial ferromagnetic conductive oxide SrRuO3 thin films
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Abstract
We have deliberately controlled the initial stage nucleation, growth mechanism and domain structure of epitaxial SrRuO3 thin films, using substrate etching, miscut and lattice mismatch. The use of buffered HF etched substrates results in more uniform coverage and two-dimensional growth of ultrathin SrRuO3 films, as compared to polished substrates. For thicker films, the use of exact (001) SrTiO3 substrates results in growth by two-dimensional nucleation, leading to two 90 degree domains in the plane. As the miscut angle of vicinal (001) SrTiO3 substrates is increased, step flow growth occurs leading to single domain films. An incoherent three dimensional island growth occurs on (001) LaAlO3 substrates, resulting in multi domain films.
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Chang-Beom Eom, "Nanoscale controlled growth and domain structure of epitaxial ferromagnetic conductive oxide SrRuO3 thin films", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); doi: 10.1117/12.335910; https://doi.org/10.1117/12.335910
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KEYWORDS
Thin films

Polishing

Scanning tunneling microscopy

Surface finishing

Oxides

Image analysis

Perovskite

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