Role of interface orientation in the coupling of an anisotropic superconductor with a normal conductor

Emil Polturak; Orna Nesher; Gad Koren

doi:10.1117/12.335909

22 December 1998 Role of interface orientation in the coupling of an anisotropic superconductor with a normal conductor

Emil Polturak, Orna Nesher, Gad Koren

Proceedings Volume 3481, Superconducting and Related Oxides: Physics and Nanoengineering III; (1998) https://doi.org/10.1117/12.335909
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

The coupling between a HTSC thin film (S) and a normal conductor (N) in proximity is still not well understood. Most of the investigations done so far look at the penetration of superconductivity into N. We have extended this type of investigation to look at the other side of the coin, namely at the influence of N on S. Here, we report measurements of the critical temperature of S-N bilayer films as a function of the thickness of the YBCO (S) layer using Co doped YBCO as the Normal material. To understand the role of the S-N interface, bilayer having different interface morphologies were prepared using different growth modes of the films. We found that depending on the morphology of the S-N interface, the coupling between S and N layers can be turned on to depress the T_c of S by tens of degrees, or turned off so the layers appear almost totally decoupled. This novel effect is strongly correlated with the presence of different crystalline orientations on the interface. The range of influence of N on S is about 240 angstrom, rather than 20 angstrom expected from the coherence length (xi) s. These observations are explained using a theory of quasiparticle transmission into an anisotropic superconductor.

Citation Download Citation

Emil Polturak, Orna Nesher, and Gad Koren "Role of interface orientation in the coupling of an anisotropic superconductor with a normal conductor", Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); https://doi.org/10.1117/12.335909

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available