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21 September 1998 Lithography optics: its present and future
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Proceedings Volume 3482, International Optical Design Conference 1998; (1998)
Event: International Optical Design Conference, 1998, Kona, HI, United States
Firstly, various technical aspects of ArF optics are surveyed. At present, the ArF excimer laser is regarded as one of the most promising candidates as a next-generation light source for optical lithography. Discussions are ranging over some critical issues of ArF optics. The lifetime of ArF optics supposedly limited by the radiation compaction of silica glass is estimated in comparison with KrF optics. Availability of calcium fluoride (CaF2) is also discussed. As a designing issue, a comparative study is made about the optical configuration, dioptric or catadioptric. In the end, our resist-based performance is shown. Secondly, estimated are the future trend regarding minimum geometry and the optical parameters, such as numerical aperture and wavelength. For the estimation, simulations based on aerial images are performed, where in the resolution limit is defined as a minimum feature size which retains practical depth of focus. Pattern geometry is classified into two categories, which are dense lines and isolated lines. Available wavelengths are assumed to be KrF excimer laser ((λ =248 nm), ArF excimer laser (λ =193 nm) and F2 excimer laser (λ =157 nm). Based upon the simulation results, the resolution limit is estimated for each geometry and each wavelength.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koichi Matsumoto and Takashi Mori "Lithography optics: its present and future", Proc. SPIE 3482, International Optical Design Conference 1998, (21 September 1998);


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