Domain switch in silicon-nematic-ITO structure

Ivanovich Mikhola Gritsenko; Sergey Ivanovich Kucheev

doi:10.1117/12.323723

23 September 1998 Domain switch in silicon-nematic-ITO structure

Ivanovich Mikhola Gritsenko, Sergey Ivanovich Kucheev

Proceedings Volume 3488, Nonlinear Optics of Liquid and Photorefractive Crystals II; (1998) https://doi.org/10.1117/12.323723
Event: International Conference on Nonlinear Optics of Liquid and Photorefractive Crystals, 1997, Partenit, Crimea, Ukraine

Abstract

The nonlinear electrooptic effect in the silicon substrate- nematic-ITO structure is described. It is supposed that a domain switching of a director is induced by a local accumulation and spreading of injected charge within a nematic layer. The exciting centers of a domain can be the defects of silicon surface and the laser irradiation.

Citation Download Citation

Ivanovich Mikhola Gritsenko and Sergey Ivanovich Kucheev "Domain switch in silicon-nematic-ITO structure", Proc. SPIE 3488, Nonlinear Optics of Liquid and Photorefractive Crystals II, (23 September 1998); https://doi.org/10.1117/12.323723

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