23 September 1998 Domain switch in silicon-nematic-ITO structure
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Proceedings Volume 3488, Nonlinear Optics of Liquid and Photorefractive Crystals II; (1998) https://doi.org/10.1117/12.323723
Event: International Conference on Nonlinear Optics of Liquid and Photorefractive Crystals, 1997, Partenit, Crimea, Ukraine
Abstract
The nonlinear electrooptic effect in the silicon substrate- nematic-ITO structure is described. It is supposed that a domain switching of a director is induced by a local accumulation and spreading of injected charge within a nematic layer. The exciting centers of a domain can be the defects of silicon surface and the laser irradiation.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivanovich Mikhola Gritsenko, Ivanovich Mikhola Gritsenko, Sergey Ivanovich Kucheev, Sergey Ivanovich Kucheev, } "Domain switch in silicon-nematic-ITO structure", Proc. SPIE 3488, Nonlinear Optics of Liquid and Photorefractive Crystals II, (23 September 1998); doi: 10.1117/12.323723; https://doi.org/10.1117/12.323723
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