4 December 1998 Lateral band gap engineering by focused ion beam implantation for optoelectronic devices
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Abstract
For the integration of optoelectronic components, like lasers, modulators, detectors or waveguides, materials with different band gaps are necessary, e.g. to avoid absorption in waveguides or to get optimal intensity contrast in modulators. By implantation induced thermal intermixing of semiconductor quantum film structures the band gap can be selectively changed and the band gap shift can be controlled by the implantation parameters. Focused ion beam technology additionally allows maskless patterning, which simplifies epitaxial overgrowth and makes in-situ processing possible. The paper gives an overview about highly spatially resolved quantum well intermixing by focused ion beam technology and how this technique can be applied for the definition of optoelectronic devices and components. By the high spatial resolution of the currently used focused ion beam systems the definition of first order gratings for wavelengths from the infrared to the visible spectrum were achieved. New approaches for the fabrication of gain coupled distributed feedback lasers based on implanted first order gratings for 1.0 and 1.55 micrometers emission wavelength are discussed and device results will be presented.
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Johann-Peter Reithmaier, Johann-Peter Reithmaier, N. Mais, N. Mais, H. Koenig, H. Koenig, Alfred W. B. Forchel, Alfred W. B. Forchel, } "Lateral band gap engineering by focused ion beam implantation for optoelectronic devices", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328730; https://doi.org/10.1117/12.328730
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