Light emission from silicon nanometer-scale diode-antifuses

V. E. Houtsma; J. Holleman; V. Zieren; P. H. Woerlee

doi:10.1117/12.328725

4 December 1998 Light emission from silicon nanometer-scale diode antifuses

V. E. Houtsma, J. Holleman, V. Zieren, P. H. Woerlee

Proceedings Volume 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications; (1998) https://doi.org/10.1117/12.328725
Event: 1998 International Conference on Applications of Photonic Technology, 1998, Ottawa, Canada

Abstract

Results are presented of the spectrally resolved absolute measurements of the electroluminescence of reverse-biased silicon nanometer-scale diode-antifuses brought into breakdown. The emission spectrum of the diode-antifuses is measured in the energy range of 1.4 - 2.8 eV at different reverse currents. The dependence of the emission intensity on the current was evaluated to study the dominant emission processes. Also the stability of the diode-antifuses has been tested. Results indicate that the diode-antifuse is basically a high quality device. Furthermore due to the nanometer-scale dimensions of the diode-antifuse, very high electrical fields and current densities are possible at low power consumption. This makes the diode-antifuse an excellent candidate to be utilized as a light source in Si- based sensors and actuator applications.

Citation Download Citation

V. E. Houtsma, J. Holleman, V. Zieren, and P. H. Woerlee "Light emission from silicon nanometer-scale diode antifuses", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); https://doi.org/10.1117/12.328725

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