4 December 1998 Light emission in silicon nanostructures
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Abstract
Interest in obtaining useful light emission from silicon- based materials has never been greater. This is because there is a strong demand for optoelectronic devices based on silicon and also because there has recently been significant progress in materials engineering methods. Here we review the latest developments in this work, which is aimed at overcoming the indirect band gap limitations in light emission from silicon. One promising new approach, based on thin-layer Si/SiO2 superlattices, is reviewed in detail. The incorporation of these different materials into devices is described and future device prospects are assessed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Lockwood, David J. Lockwood, } "Light emission in silicon nanostructures", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328603; https://doi.org/10.1117/12.328603
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