4 December 1998 Mid-IR light-emitting diodes using InAs, InAs1-y PxSby, and InAs1-x-y PxSby epilayers on InAs (100)
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Abstract
The development of mid-infrared optoelectronic emitters and detectors is important for long-wave photonic applications. We report mid-IR emission spectra for three types of narrow- gap III-V light emitting diodes consisting of n-/p-InAs homojunctions and of n-InAs1-ySby/p-InAs1-ySby, and n-InAs/p-InAs1-x-yPxSby heterojunctions all grown by liquid phase epitaxy on InAs (100) substrates. Spectra were obtained under forward bias for photon energies between 300 and 425 meV (4.1 - 2.9 micrometers ), temperatures from 5 to 292 K, and bias currents from 20 (mu) A to 12 mA. Comparison are made with photoluminescence spectra from similar material.
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Nelson L. Rowell, Tomuo Yamaguchi, X. Y. Gong, Hirofumi Kan, "Mid-IR light-emitting diodes using InAs, InAs1-y PxSby, and InAs1-x-y PxSby epilayers on InAs (100)", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328742; https://doi.org/10.1117/12.328742
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