4 December 1998 Mid-IR light-emitting diodes using InAs, InAs1-y PxSby, and InAs1-x-y PxSby epilayers on InAs (100)
Author Affiliations +
Abstract
The development of mid-infrared optoelectronic emitters and detectors is important for long-wave photonic applications. We report mid-IR emission spectra for three types of narrow- gap III-V light emitting diodes consisting of n-/p-InAs homojunctions and of n-InAs1-ySby/p-InAs1-ySby, and n-InAs/p-InAs1-x-yPxSby heterojunctions all grown by liquid phase epitaxy on InAs (100) substrates. Spectra were obtained under forward bias for photon energies between 300 and 425 meV (4.1 - 2.9 micrometers ), temperatures from 5 to 292 K, and bias currents from 20 (mu) A to 12 mA. Comparison are made with photoluminescence spectra from similar material.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nelson L. Rowell, Nelson L. Rowell, Tomuo Yamaguchi, Tomuo Yamaguchi, X. Y. Gong, X. Y. Gong, Hirofumi Kan, Hirofumi Kan, } "Mid-IR light-emitting diodes using InAs, InAs1-y PxSby, and InAs1-x-y PxSby epilayers on InAs (100)", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328742; https://doi.org/10.1117/12.328742
PROCEEDINGS
6 PAGES


SHARE
Back to Top