4 December 1998 Study of photodegradation in II-VI heterostructures using n-i-n photoconductors
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In this work, photo-degradation in ZnSe/Zn0.67Cd0.33Se multiple quantum well (MQW) structures was studied using photoluminescence of undoped structures and photocurrent of n-i-n photoconductors. The photoluminescence measurements were performed with respect to sample temperature, pump power and pump wavelength. The dependence of the measured photo-degradation from optical pumping on each of these parameters was quantified. To further understand this problem, n-i-n photoconductors were fabricated from these materials. Using these photoconductors, the formation of non-radiative recombination sites was monitored using standard photocurrent experiments. Moreover, the photocurrent generated was investigated as a function of applied voltage and excitation wavelength. The magnitude of the photocurrent decayed in a similar fashion to the photoluminescence measurements. Furthermore, n-i-n photoconductors fabricated from bulk material, as opposed to MQW structures, showed no evidence of photo-degradation. This implies that the photo- degradation is due to the interaction of the two constituent material systems.
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Alexander N. Cartwright, Alexander N. Cartwright, Sundari Nagarathnam, Sundari Nagarathnam, E. H. Lee, E. H. Lee, H. Luo, H. Luo, "Study of photodegradation in II-VI heterostructures using n-i-n photoconductors", Proc. SPIE 3491, 1998 International Conference on Applications of Photonic Technology III: Closing the Gap between Theory, Development, and Applications, (4 December 1998); doi: 10.1117/12.328679; https://doi.org/10.1117/12.328679

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