Lead Sulfide-Silicon MOSFET Infrared Focal Plane Development

John R. Barrett; Murzban D. Jhabvala

doi:10.1117/12.933894

10 August 1983 Lead Sulfide-Silicon MOSFET Infrared Focal Plane Development

John R. Barrett, Murzban D. Jhabvala

Proceedings Volume 0350, Focal Plane Methodologies III; (1983) https://doi.org/10.1117/12.933894
Event: 26th Annual Technical Symposium, 1982, San Diego, United States

Abstract

A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (>10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.

Citation Download Citation

John R. Barrett and Murzban D. Jhabvala "Lead Sulfide-Silicon MOSFET Infrared Focal Plane Development", Proc. SPIE 0350, Focal Plane Methodologies III, (10 August 1983); https://doi.org/10.1117/12.933894

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