10 August 1983 Lead Sulfide-Silicon MOSFET Infrared Focal Plane Development
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A process for directly integrating photoconductive lead sulfide (PbS) infrared detector material with silicon MOS integrated circuits has been developed primarily for application in long (>10,000 detector elements) linear arrays for pushbroom scanning applications. The processing technology is based on the conventional PMOS and CMOS technologies with a variation in the metallization. Results and measurements on a fully integrated eight-element multiplexer are shown.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John R. Barrett, John R. Barrett, Murzban D. Jhabvala, Murzban D. Jhabvala, "Lead Sulfide-Silicon MOSFET Infrared Focal Plane Development", Proc. SPIE 0350, Focal Plane Methodologies III, (10 August 1983); doi: 10.1117/12.933894; https://doi.org/10.1117/12.933894


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