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4 September 1998 Material study of indium implant under channel doping conditions
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In this paper we investigate the material characteristics of implanted indium under channel doping conditions. Indium was implanted into CZ silicon at an energy of 200 keV and doses of 2e12/cm2 to 1e14/cm2. Subsequent rapid thermal annealing was conducted at 950 degrees Celsius to 1050 degrees Celsius between 10 sec and 30 sec. The diffusion of indium was studied by means of Secondary Ion Mass Spectroscopy (SIMS). Up to a dose of 1e13/cm2, the diffusion of indium was in- significant. The activation of indium was studied by means of Spreading Resistance Profiling (SRP). It was found that at a concentration of about 2e17/cm3, the electrical solubility is reached above which no more activation can be achieved. Damage due to indium implant was studied by Transmission Electron Microscopy (TEM). Dislocation loops remain stable after high temperature anneal for higher dose implants and dissolve for lower dose implants.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jinning Liu, Sandeep Mehta, Sonu L. Daryanani, and Che-Hoo Ng "Material study of indium implant under channel doping conditions", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998);

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