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4 September 1998 New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing
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Abstract
Epitaxial Si1-yCy and Si1-x-yGexCy alloy layers are grown on monocrystalline silicon substrates by multiple energy ion implantation of Ge and C into single Si crystals followed by pulse excimer laser annealing. The properties of the alloy layers are determined precisely using spectroscopic ellipsometry (SE), x-ray diffraction (XRD) and Rutherford backscattering (RBS) techniques. We show that annealing energy densities higher than 2 J/cm2 result in monocrystalline epitaxial layers with low quantity of defects. The lattice contraction due to the carbon inclusion increases with the implanted C concentration up to about 1.1%. For higher values a more complex behavior is observed with partial (or total) relaxation of the layer and/or carbide formation. With optimized condition, the growing of pseudomorphic epitaxial layers, from group IV semiconductor alloys was successful on large areas thanks to the high power excimer laser developed at SOPRA (1 J/cm2 over 40 cm2 in one pulse).
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Boher, Jean-Louis P. Stehle, Jean-Philippe Piel, and Eric Fogarassy "New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323972
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