4 September 1998 Optimum bandgap profile for a high-efficiency p-i-n a-Si: H solar cell
Author Affiliations +
Abstract
High efficiency is the key to large-scale applicability of photovoltaic systems. The efficiency depends on material fabrication and design parameters. One of the most successful approaches to improve efficiency is to aid the drift of minority carriers by a stronger electric field. This can be effectively accomplished through bandgap profiling. In this paper, we have developed a model to describe bandgap profile, the electric field and the current-voltage characteristics of p-i-n solar cell. A technique for optimizing graded bandgap profile in p-i-n aSi:H solar cell has been developed using a Fletcher-Powell minimization technique. The parameters to be optimized are replaced by independent variables without constraints. The variables include the coefficients of a third order equation describing the bandgap profile under consideration. The method allows a simultaneous optimization of parameters leading to maximization of solar cell efficiency. It suggests a new cell design criterion in terms of optimum and bandgap profile.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed Bashir Saleh, Tawfik A. Namour, Ahmed K. Aboul Seoud, Sanaa Moustafa, "Optimum bandgap profile for a high-efficiency p-i-n a-Si: H solar cell", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323990; https://doi.org/10.1117/12.323990
PROCEEDINGS
6 PAGES


SHARE
Back to Top