4 September 1998 Self-aligned silicide process technology for sub-0.25-μm geometries
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This work compares the extendibility of titanium with pre- deposition amorphizing implant (PAI) and cobalt salicides to sub-0.25 micrometer technologies. Cobalt salicide has low sheet resistance and a tighter distribution of sheet resistances than titanium salicide with PAI for narrow linewidths. The reaction of cobalt with silicon is not affected by dopants in the silicon as the reaction of titanium is. Less cobalt need be deposited than titanium for a given sheet resistance target. Cobalt salicide requires fewer process steps than titanium salicide with PAI. Cobalt salicide has lower diodes for shallow junctions, requires a smaller thermal budget, and provides a lower contact resistances than titanium salicide. Thus, cobalt salicide process technology has better process control, is more compatible with sub-0.25 micrometer devices, and more compatible with interlayer connections than titanium salicide with PAI.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ted Regan White, Ted Regan White, Dave Kolar, Dave Kolar, Mohamed Jahanbani, Mohamed Jahanbani, Larry E. Frisa, Larry E. Frisa, Rajan Nagabushnam, Rajan Nagabushnam, Harry Chuang, Harry Chuang, Paul Tsui, Paul Tsui, Jeff Cope, Jeff Cope, Larry Pulvirent, Larry Pulvirent, Scott Bolton, Scott Bolton, } "Self-aligned silicide process technology for sub-0.25-μm geometries", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323957; https://doi.org/10.1117/12.323957

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