4 September 1998 Ultrathin film fully depleted CMOS/SIMOX technology with selective CVD tungsten and its application to LSIs
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Abstract
Selective W-CVD technology with hydrogenation and hydrogen- termination treatment was developed to reduce source/drain sheet resistance in ultra-thin-film fully-depleted CMOSFET's/SIMOX, and it was applied to 0.25-micrometer-gate gate-array LSIs. It is clarified that this technology ensures single-contact cells, which are vital for higher packing density, with no degradation of device characteristics, circuit performance, and LSI yield. Moreover, recent results for devices with a W-covered gate/source/drain are presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuhiro Sato, Toshihiko Kosugi, Hiromu Ishii, "Ultrathin film fully depleted CMOS/SIMOX technology with selective CVD tungsten and its application to LSIs", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); doi: 10.1117/12.323974; https://doi.org/10.1117/12.323974
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