Application of backside fiber optic system for in-situ CMP endpoint detection on shallow-trench isolation wafers

Dmitry V. Bakin; Daniel E. Glen; Mei H. Sun

doi:10.1117/12.324343

3 September 1998 Application of backside fiber optic system for in-situ CMP endpoint detection on shallow-trench isolation wafers

Dmitry V. Bakin, Daniel E. Glen, Mei H. Sun

Author Affiliations +

Proceedings Volume 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV; (1998) https://doi.org/10.1117/12.324343
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

A method of Chemical-Mechanical Planarization (CMP) endpoint detection of shallow trench isolation wafer is discussed in this paper. The detection algorithm was developed based on the interferometric intensity modulation of the light reflected from the wafer being polished. The physical model of the process proved to reliably predict behavior of the reflected signal during successive removal of a silicon oxide film and transition into patterned silicon nitride layer. The model calculates film thickness removed from STI wafers with known layer structure, from the reflected signal recorded during CMP process. The in-situ miniature system incorporating fiber-optic coupled diode laser and InGaAs photodetector was successfully implemented for the purpose of Endpoint Detection. On a patterned wafer the system can control nitride thickness removal with a better than 200 angstrom accuracy. The wireless modular design permits real- time simultaneous multiple points operation in a fully automated mode.

Citation Download Citation

Dmitry V. Bakin, Daniel E. Glen, and Mei H. Sun "Application of backside fiber optic system for in-situ CMP endpoint detection on shallow-trench isolation wafers", Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); https://doi.org/10.1117/12.324343

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