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4 September 1998 Damascene Cu-interconnect formation in benzocyclobuten (BCB) film using a novel end-point monitoring technique
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Abstract
Dual-damascene Cu-interconnect is fabricated in a low-k, divinylsiloxane-benzocyclobuten (DVS-BCB) film to reduce signal transmission delay among circuit-blocks on a chip. One of difficulties is how to make the patterns of via-holes and interconnect-trenches in the DVS-BCB films using photo-resist masks precisely. We have developed a new BCB patterning process such as 'Simultaneous resist-etch-back' (SRECK) process, in which both of the patterned photo-resist film and the DVS-BCB film are etched back simultaneously to transfer the resist-patterns to the BCB film. Since the DVS-BCB film contains siloxane-group, the intensity of Si-related Emission Light (SEL) abruptly increases just after complete pattern transfer to the DVS-BCB. Using the SRECK process with SEL- monitoring, the dual-damascene Cu-interconnects are fabricated in the DVS-BCB film with precise dimension control. Finally, the BCB/Cu-interconnects are demonstrated in the top-layered global interconnects on the advanced MPUs.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihiro Hayashi, Takahiro Onodera, Shinobu Saitoh, and Jyun Kawahara "Damascene Cu-interconnect formation in benzocyclobuten (BCB) film using a novel end-point monitoring technique", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); https://doi.org/10.1117/12.324023
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