4 September 1998 Introduction to 300-mm/0.18-μm to 0.13-μm clean CMP system
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Abstract
CMP, which has been accepted by users mainly as oxide planarization process of ILD in 200 mm/0.25 (mu) design rule, will be applied in 300 mm/0.18 (mu) - 0.13 (mu) design rule. Big features in this new stage are that in mechanical wise 'dry-in dry-out concept' is fully adopted and in process wise, various applications such as STI, metal damascene with Cu, low K materials etc. will be introduced. Accordingly, CMP is not anymore special process and higher performances like other dry processes will be required. The present situation and future points are herein reported.
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Manabu Tsujimura, Manabu Tsujimura, } "Introduction to 300-mm/0.18-μm to 0.13-μm clean CMP system", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998); doi: 10.1117/12.324030; https://doi.org/10.1117/12.324030
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