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4 September 1998 Novel AlCu: fill process for via applications
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A novel 'hot only' AlCu(0.5) fill approach for via applications is presented. It combines an IMP Ti/TiN/Ti liner/wetting layer with a modified Al-fill process. The maximum wafer temperature during deposition is approximately 420 degrees Celsius. The unique filling characteristics allows via filling from bottom up without bridging or overhang formation at the top corners. The different influences of integration issues and hardware on the filling process are discussed. Electrical data (via resistance, product yield) are presented and compared to the standard cold/hot Al-fill and W- plug fill respectively.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Helneder, Manfred Schneegans, K. Schober, Hans-Joachim Barth, U. Richter, and G. Scheinbacher "Novel AlCu: fill process for via applications", Proc. SPIE 3508, Multilevel Interconnect Technology II, (4 September 1998);

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