27 August 1998 Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques
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Abstract
An ac surface photovoltage, which is excited by a chopped photon beam in a semiconductor, is successfully applied for nondestructive detection of metallic contaminants on silicon wafer surfaces. In this report, the charge-induced phenomena at Si wafer surfaces due to various impurities and the mechanism are summarized. Metal (trivalent Al and Fe)- induced negative charges have been proposed at the top region of thermal oxide on the basis of the generally accepted oxide charge model.
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Hirofumi Shimizu, Chusuke Munakata, "Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324397; https://doi.org/10.1117/12.324397
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KEYWORDS
Semiconducting wafers

Oxides

Silicon

Aluminum

Iron

Ions

Copper

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