Contact potential difference methods for full wafer characterization of Si/SiO2 interface defects induced by plasma processing

Piotr Edelman; A. Savchouk; M. Wilson; Lubek Jastrzebski; Jacek J. Lagowski; Christopher Nauka; Shawming Ma; Andrew M. Hoff; Damon K. DeBusk

doi:10.1117/12.324400

27 August 1998 Contact potential difference methods for full wafer characterization of Si/SiO₂ interface defects induced by plasma processing

Piotr Edelman, A. Savchouk, M. Wilson, Lubek Jastrzebski, Jacek J. Lagowski, Christopher Nauka, Shawming Ma, Andrew M. Hoff, Damon K. DeBusk

Author Affiliations +

Proceedings Volume 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II; (1998) https://doi.org/10.1117/12.324400
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

We present fundamentals and representative examples of fast non-contact full wafer characterization of oxide and silicon defects induced by plasma and thermal processing steps. Parametric and distribution results are obtained using the recently introduced 'COCOS' and surface doping methodologies that enhance contact potential difference and surface photovoltage methods. The measured parameters include flatband voltage, interface trap density, soft breakdown, oxide surface potential and recovery lifetime. We studied the effects of plasma metal etching and ashing, thermal oxidation, anneal ambients and nitridation methods.

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Piotr Edelman, A. Savchouk, M. Wilson, Lubek Jastrzebski, Jacek J. Lagowski, Christopher Nauka, Shawming Ma, Andrew M. Hoff, and Damon K. DeBusk "Contact potential difference methods for full wafer characterization of Si/SiO₂ interface defects induced by plasma processing", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324400

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