27 August 1998 Correlating EEPROM end-of-line measurements with PDM in-line charging monitoring for ion implantation
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Abstract
Device charging due to ion implantation is studied, using the in-line Plasma Damage Monitor (PDM) and end-of-line measurements by means of in-house processed electrically erasable-programmable memory cells (EEPROM). PDM in-line charging monitoring is a non-contact technique to map the surface potential of a charge dielectric surface. EEPROM end-of-line measurements detect the magnitude of surface potential that has been present on the wafer during ion implantation. Both methods record the same trends in charging experiments in ion implantation processing. Good correlation is found between PDM values and Vt-shifts of EEPROM cells. These results are confirmed by measurements using the well-established technique CHARM-2. The effect of charging induced by ion implantation has been evaluated. Both PDM and EEPROMs can monitor the charging control by a plasma flood system in an ion implanter. The novel in-line technique PDM is found to be a reliable and fast turn-around method for charging control. Also, the EEPROM measurements give a realistic response of the amount of charging that devices experience. Unfortunately, both methods are not accurate enough to fine-tune the PFS settings during ion implantation.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Annemarie S. Bloot, Annemarie S. Bloot, Edwin H. J. Satink, Edwin H. J. Satink, Antonio Cacciato, Antonio Cacciato, Henk Jan F. Peuscher, Henk Jan F. Peuscher, Jan Lindeman, Jan Lindeman, John K. Lowell, John K. Lowell, } "Correlating EEPROM end-of-line measurements with PDM in-line charging monitoring for ion implantation", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324405; https://doi.org/10.1117/12.324405
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