27 August 1998 Noncontact surface potential measurements for charging reduction during TEOS deposition and ion implantation
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Abstract
In this paper, we investigate the possibility of using non- contact surface potential measurements (SPM) to study charging during plasma enhanced CVD TEOS deposition and high current ion implantation. It is found that SPM can be used for a first order and fast-feedback assessment of new recipes and tools as well as for routine monitoring of plasma damaging processes.
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Antonio Cacciato, Antonio Cacciato, Peter Schumbera, Peter Schumbera, Arne Heessels, Arne Heessels, Jan R. Marc Luchies, Jan R. Marc Luchies, M. Swaving, M. Swaving, } "Noncontact surface potential measurements for charging reduction during TEOS deposition and ion implantation", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); doi: 10.1117/12.324399; https://doi.org/10.1117/12.324399
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