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27 August 1998 Silicon wafer subsurface characterization with blue-laser/microwave and UV-laser/millimeter-wave photoconductivity techniques
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Abstract
Chemomechanical mirror polishing damages in a subsurface of silicon wafers have been revealed by photoconductivity amplitude with blue-laser/microwave photoconductivity technique and also revealed by photoconductivity technique and also revealed by photoconductivity amplitude and initial carrier lifetime with UV/millimeter photoconductivity decay technique. These noncontact techniques also have revealed subsurface damages as to be drastically influential on gate- oxide layer breakdown in MOSFET.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoh-Ichiro Ogita, Hiroshi Shinohara, Tsuyoshi Sawanobori, and Masaki Kurokawa "Silicon wafer subsurface characterization with blue-laser/microwave and UV-laser/millimeter-wave photoconductivity techniques", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324421
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