Silicon wafer subsurface characterization with blue-laser/microwave and UV-laser/millimeter-wave photoconductivity techniques

Yoh-Ichiro Ogita; Hiroshi Shinohara; Tsuyoshi Sawanobori; Masaki Kurokawa

doi:10.1117/12.324421

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27 August 1998 Silicon wafer subsurface characterization with blue-laser/microwave and UV-laser/millimeter-wave photoconductivity techniques

Yoh-Ichiro Ogita; Hiroshi Shinohara; Tsuyoshi Sawanobori; Masaki Kurokawa

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Proceedings Volume 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II; (1998) https://doi.org/10.1117/12.324421
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Chemomechanical mirror polishing damages in a subsurface of silicon wafers have been revealed by photoconductivity amplitude with blue-laser/microwave photoconductivity technique and also revealed by photoconductivity technique and also revealed by photoconductivity amplitude and initial carrier lifetime with UV/millimeter photoconductivity decay technique. These noncontact techniques also have revealed subsurface damages as to be drastically influential on gate- oxide layer breakdown in MOSFET.

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Yoh-Ichiro Ogita, Hiroshi Shinohara, Tsuyoshi Sawanobori, and Masaki Kurokawa "Silicon wafer subsurface characterization with blue-laser/microwave and UV-laser/millimeter-wave photoconductivity techniques", Proc. SPIE 3509, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II, (27 August 1998); https://doi.org/10.1117/12.324421

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