28 August 1998 Enhanced hot-carrier-induced degradation of 0.25-μm P-MOSFETs with oxide/nitride composite spacer compared to those with oxide spacer
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Abstract
Nitride LDD spacer material presents itself as a viable option for oxide spacer because of two important reasons; 1) possibility of reducing in the contact-poly spacing 2) possibility of achieving higher drive current. However, as the Si-Si3N4 barrier height is lower than that of Si-SiO2, hot-carrier degradation could be worse. To overcome this problem, it has been suggested that a thin layer SiO2 be deposited under the nitride spacer to improve the hot-carrier response. Tomohisa et al. showed that oxide LDD spacer and oxide/nitride composite spacer N- MOSFETs show better hot-carrier response than those with nitride spacer. In this paper, we show that hot-carrier degradation of P-MOSFETs with oxide/Nitride composite spacer is significantly worse than that of oxide spacer devices.
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Vijay Janapaty, Jiunn-Yann Tsai, Sharad Prasad, "Enhanced hot-carrier-induced degradation of 0.25-μm P-MOSFETs with oxide/nitride composite spacer compared to those with oxide spacer", Proc. SPIE 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, (28 August 1998); doi: 10.1117/12.324387; https://doi.org/10.1117/12.324387
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