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28 August 1998 Probe microloading effect of in-situ etch in EPROM stack-gate process
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An unpredictable significant microloading effect occurs between array and low photoresist ratio area when C2F6Cl2 and HBr are used as etch gas to define EPROM stack gate. Although we have examined etch time for array is enough, much poly residue still exist on those test keys with low photoresist ratio areas that lead to failure of electric parameter. On array area, polymer formed from C2F6 reactant gas trends to accumulate upon side-wall. Oppositely on the low photoresist area, there is almost not nay side-wall that can offer the medium absorbed by polymer. It will fall down and deposits upon poly surface. That will be a barrier. In the beginning, sufficient etch time often result from under- etch issue. We have modified etch time to get best optimal condition. Now, this issue does not occur any more.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jang Ming Chiou, Sheng Liang Pan, Kai Ming Ching, Bi-Jiang Chang, and Kuo-Liang Lu "Probe microloading effect of in-situ etch in EPROM stack-gate process", Proc. SPIE 3510, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV, (28 August 1998);


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